是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIE | 包装说明: | UNCASED CHIP, S-XUUC-N3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.91 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏源导通电阻: | 20 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 20 pF |
JESD-30 代码: | S-XUUC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VN06A1C000J0G | AMPHENOL |
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Barrier Strip Terminal Block |
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VN06-E | STMICROELECTRONICS |
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ISO high side smart power solid state relay |
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VN06SP | STMICROELECTRONICS |
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HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN06SP13TR | STMICROELECTRONICS |
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ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
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VN06SPTR-E | STMICROELECTRONICS |
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0.18A BUF OR INV BASED PRPHL DRVR, PDSO10, SOP-10 |
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VN0808 | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN0808 | MICROCHIP |
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This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and we |
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VN0808L | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN0808L | VISHAY |
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N-Channel 80- and 90-V (D-S) MOSFETs |
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VN0808L-G | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal |
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