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VESD05A8A-HNH

更新时间: 2024-11-14 12:26:35
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管
页数 文件大小 规格书
7页 144K
描述
8-Line ESD-Protection Diode Array in LLP1713-9L

VESD05A8A-HNH 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.78Is Samacsys:N
击穿电压标称值:7 V最大钳位电压:13 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:BIDIRECTIONAL
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YESBase Number Matches:1

VESD05A8A-HNH 数据手册

 浏览型号VESD05A8A-HNH的Datasheet PDF文件第2页浏览型号VESD05A8A-HNH的Datasheet PDF文件第3页浏览型号VESD05A8A-HNH的Datasheet PDF文件第4页浏览型号VESD05A8A-HNH的Datasheet PDF文件第5页浏览型号VESD05A8A-HNH的Datasheet PDF文件第6页浏览型号VESD05A8A-HNH的Datasheet PDF文件第7页 
VESD05A8A-HNH  
Vishay Semiconductors  
www.vishay.com  
8-Line ESD-Protection Diode Array in LLP1713-9L  
FEATURES  
• Ultra compact LLP1713-9L package  
1
8
9
• Low package profile < 0.6 mm  
2
3
7
• 8-line ESD-protection  
6
• Low leakage current IR < 1 μA  
4
5
• Low load capacitance CD = 30 pF  
20522  
20521  
• ESD-immunity acc. IEC 61000-4-2  
25 kV contact discharge  
30 kV air discharge  
MARKING (example only)  
• Working voltage range VRWM = 5 V  
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)  
YXX  
20719  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Dot = pin 1 marking  
Y = type code (see table below)  
XX = date code  
ORDERING INFORMATION  
DEVICE NAME  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
(8 mm TAPE ON 7" REEL)  
ORDERING CODE  
VESD05A8A-HNH-GS08  
VESD05A8A-HNH  
3000  
15 000  
PACKAGE DATA  
PACKAGE  
NAME  
TYPE  
CODE  
MOLDING COMPOUND  
MOISTURE  
SOLDERING  
CONDITIONS  
DEVICE NAME  
WEIGHT  
FLAMMABILITY RATING SENSITIVITY LEVEL  
MSL level 1  
UL 94 V-0  
VESD05A8A-HNH LLP1713-9L  
B
3.7 mg  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS  
RATING  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9)  
acc. IEC 61000-4-5; tP = 8/20 μs; single shot  
IPPM  
5
A
Peak pulse current  
Peak pulse power  
BiSy-mode: each input (pin 1 to pin 8) to any other input pin.  
Pin 9 not connected. Acc. IEC 61000-4-5; tP = 8/20 μs/single shot  
IPPM  
PPP  
2.5  
65  
33  
25  
30  
A
BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9)  
acc. IEC 61000-4-5; tP = 8/20 μs; single shot  
W
W
kV  
kV  
BiSy-mode: each input (pin 1 to pin 8) to any other input pin  
Pin 9 not connected. Acc. IEC 61000-4-5; tP = 8/20 μs/single shot  
PPP  
Contact discharge acc. IEC61000-4-2; 10 pulses  
BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9)  
VESD  
VESD  
Air discharge acc. IEC61000-4-2; 10 pulses  
BiAs-mode: each input (pin 1 to pin 8) to ground (pin 9)  
Contact discharge acc. IEC61000-4-2; 10 pulses  
BiSy-mode: each input (pin 1 to pin 8) to any other input pin.  
Pin 9 not connected.  
ESD immunity  
VESD  
12  
12  
kV  
kV  
Air discharge acc. IEC61000-4-2; 10 pulses  
BiSy-mode: each input (pin 1 to pin 8) to any other input pin.  
Pin 9 not connected.  
VESD  
Operating temperature  
Storage temperature  
Junction temperature  
TJ  
- 40 to + 125  
- 55 to + 150  
°C  
°C  
TSTG  
Rev. 1.5, 26-Jun-12  
Document Number: 81629  
1
For technical questions, contact: ESDprotection@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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