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VESD09A4A-HSF

更新时间: 2024-11-15 14:53:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 155K
描述
4-Line (Quad) ESD Protection Diode Array in LLP75-6L

VESD09A4A-HSF 数据手册

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VESD09A4A-HSF  
Vishay Semiconductors  
www.vishay.com  
4-Line (Quad) ESD Protection Diode Array in LLP75-6L  
FEATURES  
• Compact LLP75-6L package  
6
1
5
4
• Low package height < 0.6 mm  
• 4-line ESD protection (quad)  
• Low leakage current < 0.1 μA  
• Low load capacitance CD = 6 pF  
2
3
21002  
20453  
1
• ESD immunity acc. IEC 61000-4-2  
8 kV contact discharge  
10 kV air discharge  
MARKING (example only)  
• Surge current acc. IEC 61000-4-5 IPP > 1.5 A  
XX  
YY  
• Soldering can be checked by standard vision inspection.  
No X-ray necessary  
21001  
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)  
Dot = pin 1 marking  
XX = date code  
YY = type code (see table below)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
click logo to get started  
DESIGN SUPPORT TOOLS  
Models  
Available  
ORDERING INFORMATION  
DEVICE NAME  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
(8 mm TAPE ON 7" REEL)  
ORDERING CODE  
VESD09A4A-HSF  
VESD09A4A-HSF-GS08  
3000  
15 000  
PACKAGE DATA  
PACKAGE TYPE  
MOLDING COMPOUND  
FLAMMABILITY RATING  
MOISTURE  
SENSITIVITY LEVEL  
DEVICE NAME  
WEIGHT  
SOLDERING CONDITIONS  
NAME  
CODE  
MSL level 1  
(according J-STD-020)  
VESD09A4A-HSF LLP75-6L  
49  
4.2 mg  
UL 94 V-0  
Peak temperature max. 260 °C  
ABSOLUTE MAXIMUM RATINGS VESD09A4A-HSF  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6);  
acc. IEC 61000-4-5; tp = 8/20 μs; single shot  
Peak pulse current  
IPPM  
PPP  
VESD  
VESD  
1.5  
A
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6);  
acc. IEC 61000-4-5; tp = 8/20 μs; single shot  
Peak pulse power  
ESD immunity  
30  
8
W
kV  
kV  
Contact discharge acc. IEC 61000-4-2; 10 pulses  
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6)  
Air discharge acc. IEC 61000-4-2; 10 pulses  
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6)  
10  
Operating temperature  
Storage temperature  
Junction temperature  
TJ  
-40 to +125  
-55 to +150  
°C  
°C  
TSTG  
Rev. 1.7, 04-Jan-2019  
Document Number: 81834  
1
For technical questions, contact: ESDprotection@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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