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VEC2814

更新时间： 2024-11-04 03:20:19
品牌 Logo 应用领域
三洋 - SANYO 肖特基二极管开关通用开关
页数 文件大小 规格书
6页 50K
描述
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

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中文翻译

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VEC2814 数据手册

 浏览型号VEC2814的Datasheet PDF文件第2页浏览型号VEC2814的Datasheet PDF文件第3页浏览型号VEC2814的Datasheet PDF文件第4页浏览型号VEC2814的Datasheet PDF文件第5页浏览型号VEC2814的Datasheet PDF文件第6页 
Ordering number : ENA0390A  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : N-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
VEC2814  
General-Purpose Switching Device  
Applications  
Features  
•
DC / DC converter.  
•
Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package  
facilitating high-density mounting.  
[MOSFET]  
•
•
•
1.8V drive.  
[SBD]  
•
Short reverse recovery time.  
•
Low forward voltage.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
20  
±10  
3
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW≤10µs, duty cycle≤1%  
12  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit  
0.8  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : CC  
V
30  
V
V
RRM  
V
35  
1
RSM  
I
A
O
I
50Hz sine wave, 1 cycle  
10  
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N0106 SY IM TC-00000301 / 71206 / 42506PE MS IM TB-00002243  
No. A0390-1/6  
123456

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