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VEC2819

更新时间： 2024-11-04 03:20:19
品牌 Logo 应用领域
三洋 - SANYO 肖特基二极管开关通用开关
页数 文件大小 规格书
6页 66K
描述
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

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中文翻译

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VEC2819 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
其他特性：LOW NOISE, HIGH RELIABILITY配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：3.5 A
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：0.072 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VEC2819 数据手册

 浏览型号VEC2819的Datasheet PDF文件第2页浏览型号VEC2819的Datasheet PDF文件第3页浏览型号VEC2819的Datasheet PDF文件第4页浏览型号VEC2819的Datasheet PDF文件第5页浏览型号VEC2819的Datasheet PDF文件第6页 
Ordering number : ENA0536  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : P-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
VEC2819  
General-Purpose Switching Device  
Applications  
Features  
•
DC / DC converter.  
•
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package  
facilitating high-density mounting.  
[MOSFET]  
•
Low ON-resistance  
•
Ultrahigh-speed switching.  
•
1.8V drive.  
[SBD]  
•
Low switching noise.  
•
Low leakage current and high reliability due to planar structure.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
--20  
±10  
--3.5  
--14  
1.0  
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit  
A
DP  
P
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +125  
[SBD]  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Marking : CT  
V
30  
30  
V
V
RRM  
V
RSM  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before using any SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
13107PE TI IM TC-00000472 No. A0536-1/6  
123456

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