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VEC2905

更新时间： 2024-11-04 06:02:35
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管通用开关
页数 文件大小 规格书
6页 71K
描述
PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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中文翻译

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VEC2905 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.46
Is Samacsys：N最大集电极电流 (IC)：3 A
集电极-发射极最大电压：30 V配置：SINGLE WITH BUILT-IN FET AND DIODE
最小直流电流增益 (hFE)：200最大降落时间（tf）：62 ns
JESD-30 代码：R-PDSO-F8元件数量：1
端子数量：8最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：1.1 W认证状态：Not Qualified
最大上升时间（tr）：53 ns子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：380 MHz
VCEsat-Max：0.235 VBase Number Matches：1

VEC2905 数据手册

 浏览型号VEC2905的Datasheet PDF文件第2页浏览型号VEC2905的Datasheet PDF文件第3页浏览型号VEC2905的Datasheet PDF文件第4页浏览型号VEC2905的Datasheet PDF文件第5页浏览型号VEC2905的Datasheet PDF文件第6页 
Ordering number : ENA1045  
SANYO Sem iconductors  
DATA S HEET  
PNP Epitaxial Planar Silicon Transistor  
P-Channel Silicon MOSFET  
VEC2905  
General-Purpose Switching Device  
Applications  
Features  
•
Composite type, facilitatiing high-density mounting.  
Mounting height 0.75mm.  
•
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[TR]  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Collector Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
V
--30  
--30  
--6.5  
-- 5  
V
V
CBO  
CEO  
ECO  
EBO  
V
V
I
C
-- 3  
A
Collector Current (Pulse)  
Base Current  
I
-- 5  
A
CP  
I
B
--600  
1.1  
mA  
W
°C  
°C  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
[FET]  
P
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit  
C
Tj  
Tstg  
150  
--55 to +150  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
--20  
V
V
DSS  
V
±10  
GSS  
I
D
-- 3  
--12  
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
Marking : AJ  
I
PW≤10μs, duty cycle≤1%  
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit  
A
DP  
P
1.1  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
20608PE TI IM TC-00001176 No. A1045-1/6  
123456

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