5秒后页面跳转
V62C1801024L-70B PDF预览

V62C1801024L-70B

更新时间: 2024-10-13 22:34:51
品牌 Logo 应用领域
MOSEL 静态存储器
页数 文件大小 规格书
10页 94K
描述
Ultra Low Power 128K x 8 CMOS SRAM

V62C1801024L-70B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA33,6X8,30
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.92最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:12 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA33,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000005 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.025 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9 mm
Base Number Matches:1

V62C1801024L-70B 数据手册

 浏览型号V62C1801024L-70B的Datasheet PDF文件第2页浏览型号V62C1801024L-70B的Datasheet PDF文件第3页浏览型号V62C1801024L-70B的Datasheet PDF文件第4页浏览型号V62C1801024L-70B的Datasheet PDF文件第5页浏览型号V62C1801024L-70B的Datasheet PDF文件第6页浏览型号V62C1801024L-70B的Datasheet PDF文件第7页 
V62C1801024L(L)  
Ultra Low Power  
128K x 8 CMOS SRAM  
Functional Description  
Features  
The V62C1801024L is a low power CMOS Static RAM or-  
ganized as 131,072 words by 8 bits. Easy memory expansion  
• Ultra Low-power consumption  
- Active: 20mA at 70ns  
- Stand-by: 5 mA (CMOS input/output)  
1 mA CMOS input/output, L version  
is provided by an active LOW CE1  
, an active HIGH CE2, an  
, and Tri-state I/O’s. This device has an a-  
active LOW OE  
utomatic power-down mode feature when deselected.  
• Single +1.8V to 2.2V Power Supply  
• Equal access and cycle time  
Writing to the device is accomplished by taking Chip E-  
) LOW, and Chip Ena-  
nable 1 (CE1 ) with Write Enable (WE  
ble 2 (CE2) HIGH. Reading from the device is performed by  
) with Output Enable (OE)  
taking Chip Enable 1 (CE1  
• 70/85/100/150 ns access time  
LOW while Write Enable (WE ) and Chip Enable 2 (CE2)  
is HIGH. The I/O pins are placed in a high-impedance st-  
ate when the device is deselected: the outputs are disabled  
during a write cycle.  
• Easy memory expansion with CE1, CE2  
inputs  
and OE  
• 1.0V data retention mode  
The V62C1801024LL comes with a 1V data retention feature  
and Lower Standby Power. The V62C1801024L is available in  
a 32-pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.  
• TTL compatible, Tri-state input/output  
• Automatic power-down when deselected  
32-Pin TSOP1 / STSOP (See next page)  
Logic Block Diagram  
A
11  
OE  
1
2
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A
9
A
10  
A
8
CE1  
I/O  
I/O  
I/O  
I/O  
I/O  
GND  
I/O  
I/O  
I/O  
3
INPUT BUFFER  
A13  
8
4
A
0
A
WE  
CE  
7
5
1  
A
2
2
6
6
I/O8  
3  
A
5
A
15  
7
Vcc  
NC  
4
8
A
4
1024  
9
A
5  
X
A
16  
14  
12  
3
10  
11  
12  
13  
14  
15  
16  
A
6  
A
2
1024  
A
7  
1
A
I/O1  
A8  
A
7
6
5
4
A
0
9  
A
A
A
1
A2  
A3  
A
A
OE  
COLUMN DECODER  
WE  
CONTROL  
CE1  
CIRCUIT  
CE2  
A
10  
A11  
A12  
A13  
A14  
A
15  
A
16  
1
REV. 1.1 April 2001 V62C1801024L(L)  

与V62C1801024L-70B相关器件

型号 品牌 获取价格 描述 数据表
V62C1801024L-70T MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024L-70V MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024L-85B MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024L-85T MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024L-85V MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024LL MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024LL-100B MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024LL-100T MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024LL-100V MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM
V62C1801024LL-150B MOSEL

获取价格

Ultra Low Power 128K x 8 CMOS SRAM