5秒后页面跳转
V62/12614-01XE PDF预览

V62/12614-01XE

更新时间: 2024-02-09 19:54:08
品牌 Logo 应用领域
德州仪器 - TI 放大器
页数 文件大小 规格书
26页 1813K
描述
HIGH COMMON-MODE VOLTAGE DIFFERENCE AMPLIFIER

V62/12614-01XE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:5.79放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最小共模抑制比:84 dB
标称共模抑制比:98 dB频率补偿:YES
最大输入失调电压:3500 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
低-失调:YES微功率:YES
湿度敏感等级:2负供电电压上限:-20 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:5/+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:1.7 V/us
标称压摆率:5 V/us子类别:Operational Amplifier
最大压摆率:1.1 mA供电电压上限:20 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:500 kHz
最小电压增益:1宽带:NO
宽度:3.9 mmBase Number Matches:1

V62/12614-01XE 数据手册

 浏览型号V62/12614-01XE的Datasheet PDF文件第2页浏览型号V62/12614-01XE的Datasheet PDF文件第3页浏览型号V62/12614-01XE的Datasheet PDF文件第4页浏览型号V62/12614-01XE的Datasheet PDF文件第5页浏览型号V62/12614-01XE的Datasheet PDF文件第6页浏览型号V62/12614-01XE的Datasheet PDF文件第7页 
INA149-EP  
www.ti.com  
SBOS608A MARCH 2012REVISED APRIL 2012  
HIGH COMMON-MODE VOLTAGE DIFFERENCE AMPLIFIER  
1
FEATURES  
2
Common-Mode Voltage Range: ±275 V  
Minimum CMRR: 84 dB from –55°C to +125°C  
DC Specifications:  
SUPPORTS DEFENSE, AEROSPACE,  
AND MEDICAL APPLICATIONS  
Controlled Baseline  
One Assembly/Test Site  
One Fabrication Site  
Maximum Offset Voltage: 3500 μV  
Maximum Gain Error: 0.047%  
Available in Military (–55°C/125°C)  
Temperature Range(1)  
Maximum Gain Nonlinearity: 0.001% FSR at  
25°C  
Extended Product Life Cycle  
Extended Product-Change Notification  
Product Traceability  
AC Performance:  
Bandwidth: 500 kHz  
Typical Slew Rate: 5 V/μs  
Wide Supply Range: ±2.0 V to ±18 V  
120  
INA149  
Competitor A  
Maximum Quiescent Current: 1100 μA  
110  
100  
90  
Output Swing on ±15-V Supplies: ±13.5 V  
Input Protection:  
Common-Mode: ±500 V  
Differential: ±500 V  
80  
70  
APPLICATIONS  
60  
High-Voltage Current Sensing  
Battery Cell Voltage Monitoring  
Power-Supply Current Monitoring  
Motor Controls  
50  
40  
10  
100  
1k  
10k  
100k  
Frequency (Hz)  
Replacement for Isolation Circuits  
(1) Additional temperature ranges available - contact factory  
DESCRIPTION  
The INA149 is a precision unity-gain difference amplifier with a very high input common-mode voltage range. It is  
a single, monolithic device that consists of a precision op amp and an integrated thin-film resistor network. The  
INA149 can accurately measure small differential voltages in the presence of common-mode signals up to  
±275 V. The INA149 inputs are protected from momentary common-mode or differential overloads of up to  
500 V.  
In many applications, where galvanic isolation in not required, the INA149 can replace isolation amplifiers. This  
ability can eliminate costly isolated input side power supplies and the associated ripple, noise, and quiescent  
current. The excellent 0.0005% nonlinearity and 500-kHz bandwidth of the INA149 are superior to those of  
conventional isolation amplifiers.  
The INA149 is pin-compatible with the INA117 and INA148 type high common-mode voltage amplifiers and  
offers improved performance over both devices. The INA149 is available in the SOIC-8 package with operation  
specified over the military temperature range of –55°C to +125°C.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2012, Texas Instruments Incorporated  

与V62/12614-01XE相关器件

型号 品牌 获取价格 描述 数据表
V62/12615-01XE TI

获取价格

增强型产品 PHYTER 极端温度单端口 10/100Mb/s 以太网物理层 | PHP
V62/12615-01XE-R TI

获取价格

增强型产品 PHYTER 极端温度单端口 10/100Mb/s 以太网物理层 | PHP
V62/12615-01YE TI

获取价格

增强型产品 PHYTER 极端温度单端口 10/100Mb/s 以太网物理层 | PTB
V62/12615-01YE-R TI

获取价格

增强型产品 PHYTER 极端温度单端口 10/100Mb/s 以太网物理层 | PTB
V62/12618-01XE TI

获取价格

增强型产品通用和 PCI-X 1:4 时钟缓冲器 | PW | 8 | -40 to 10
V62/12619-01XE TI

获取价格

1.1nV/√Hz NOISE, LOW POWER, PRECISION OPERA
V62/12620-01XE TI

获取价格

具有 2KB 闪存和 128B RAM 的增强型 16 位超低功耗混合信号微控制器 | D
V62/12620-01XE-T TI

获取价格

具有 2KB 闪存和 128B RAM 的增强型 16 位超低功耗混合信号微控制器 | D
V62/12621-01XE TI

获取价格

具有 2KB 闪存和 128B RAM 的增强型 16 位超低功耗混合信号微控制器 | P
V62/12621-01XE-T TI

获取价格

具有 2KB 闪存和 128B RAM 的增强型 16 位超低功耗混合信号微控制器 | P