Datasheet > V60120C_11

V60120C_11

更新时间： 2022-09-14 20:37:24

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	134K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60120C_11 数据手册

New Product

V60120C

Vishay General Semiconductor

350

300

250

200

150

100

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

T_J= T_Jmax.

8.3 ms Single Half Sine-Wave

1000

100

0.1

100

Number of Cycles at 60 Hz

Reverse Voltage (V)

Fig. 3 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

100

Junction to Case

T_A= 150 °C

T_A= 125 °C

T_A= 25 °C

0.1

0.01

0.1

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 7 - Typical Transient Thermal Impedance Per Diode

100

T_A= 150 °C

T_A= 125 °C

0.1

T_A= 25 °C

0.01

0.001

90 100

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 - Typical Reverse Characteristics Per Diode

Document Number: 89251

Revision: 23-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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