Datasheet > V60120C_11

V60120C_11

更新时间： 2024-01-06 01:52:52

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	134K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60120C_11 数据手册

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V60120C

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

0.113 (2.87)

0.103 (2.62)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.573 (14.55)

0.635 (16.13)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 89251

Revision: 23-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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