5秒后页面跳转
V60100C-M3/4W PDF预览

V60100C-M3/4W

更新时间: 2024-02-28 20:27:18
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
4页 132K
描述
DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TMBS, 3 PIN, Rectifier Diode

V60100C-M3/4W 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.48
其他特性:HIGH RELIABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.58 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:320 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

V60100C-M3/4W 数据手册

 浏览型号V60100C-M3/4W的Datasheet PDF文件第1页浏览型号V60100C-M3/4W的Datasheet PDF文件第2页浏览型号V60100C-M3/4W的Datasheet PDF文件第4页 
V60100C  
Vishay General Semiconductor  
www.vishay.com  
100  
10  
10 000  
1000  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TA = 150 °C  
TA = 125 °C  
TA = 100 °C  
1
TA = 25 °C  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
0.1  
1
10  
Reverse Voltage (V)  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
1000  
10  
100  
TA = 150 °C  
TA = 125 °C  
10  
TA = 100 °C  
1
1
0.1  
TA = 25 °C  
0.01  
0.001  
0.1  
0.01  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Fig. 4 - Typical Reverse Characteristics Per Diode  
Fig. 6 - Typical Transient Thermal Impedance Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
0.415 (10.54)  
0.380 (9.65)  
0.161 (4.08)  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.139 (3.53)  
0.113 (2.87)  
0.103 (2.62)  
0.603 (15.32)  
0.635 (16.13)  
0.573 (14.55)  
0.350 (8.89)  
0.625 (15.87)  
PIN  
2
1
3
0.330 (8.38)  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.104 (2.65)  
0.096 (2.45)  
0.022 (0.56)  
0.014 (0.36)  
Revision: 09-Nov-17  
Document Number: 89155  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与V60100C-M3/4W相关器件

型号 品牌 描述 获取价格 数据表
V60100C-M3-4W VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier

获取价格

V60100P VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10

获取价格

V60100P_15 VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier

获取价格

V60100P-E3/45 VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10

获取价格

V60100PW VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier

获取价格

V60100PW_15 VISHAY Dual High-Voltage Trench MOS Barrier Schottky Rectifier

获取价格