Datasheet > V3NM63

V3NM63

更新时间： 2024-11-15 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	178K
描述
Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

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V3NM63 数据手册

V3NM63

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

Available

• Low profile package - typical height of 0.88 mm

• Leadless DFN package with side-wettable

flanks suitable for customer AOI (Automatic

Optical Inspection)

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

DFN3820A

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

LINKS TO ADDITIONAL RESOURCES

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

• Compatible to SMP (DO-220AA) package case outline

EDA / CAD

Documents

Packages

Marking

Application

Notes

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

I_F(AV)

3 A

60 V

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

V_RRM

I_FSM

80 A

V_Fat I_F= 1.5 A (T_J= 125 °C)

T_Jmax.

0.42 V

175 °C

DFN3820A

Single

MECHANICAL DATA

Case: DFN3820A

Package

Circuit configuration

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

halogen-free, RoHS-compliant, and

commercial grade

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Polarity: color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V3NM63

UNIT

Device marking code

3MF

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum average forward rectified current (fig. 1)

(2)

I_F(AV)

2.2

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 10 mm x 10 mm copper pad area PCB

Free air, mounted on FR4 PCB, 2 oz., standard footprint

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Revision: 10-Nov-2023

Document Number: 98438

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V3NM63相关器件

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V3P22	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
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V3P22HM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P22-M3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P22-M3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
V3P6L	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6LHM3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6LHM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
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