Datasheet > V3P6

V3P6

更新时间： 2024-11-14 08:15:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	81K
描述
Surface Mount Trench MOS Barrier Schottky Rectifier

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中文翻译

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V3P6 数据手册

New Product

V3P6

Vishay General Semiconductor

Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES

• Low profile package

TMBS^®eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Not recommended for PCB bottom side wave mounting

DO-220AA (SMP)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

3.0 A

60 V

Case: DO-220AA (SMP)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

- halogen-free, RoHS compliant, and

I_FSM

60 A

commercial grade

V_Fat I_F= 3.0 A

T_Jmax.

0.48 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V3P6

V36

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

3.0

Maximum DC forward current

(2)

I_F

2.4

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Notes

(1)

Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB

Free air, mounted on recommended copper pad area

(2)

Document Number: 89344

Revision: 18-Oct-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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