Datasheet > V3P22-M3/I

V3P22-M3/I

更新时间： 2024-11-15 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	105K
描述
Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V3P22-M3/I 数据手册

V3P22

www.vishay.com

Vishay General Semiconductor

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

• Low profile package

eSMP^®Series

Available

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified available

SMP (DO-220AA)

- Automotive ordering code; base P/NHM3

Cathode

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESIGN SUPPORT TOOLS AVAILABLE

TYPICAL APPLICATIONS

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: SMP (DO-220AA)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

3.0 A

200 V

60 A

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 3.0 A

T_Jmax.

0.70 V

175 °C

halogen-free, RoHS-compliant, and

Package

SMP (DO-220AA)

Single

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

Circuit configuration

meets JESD 201 class 2 whisker test

Polarity: color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V3P22

V3D

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

1.7

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

(3)

Operating junction and storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 10 mm x 10 mm PCB pad area

Free air, mounted on recommended copper pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 03-Jun-2019

Document Number: 87471

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V3P22-M3/I相关器件

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V3P6	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
V3P6L	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6LHM3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6LHM3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6L-M3/H	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6L-M3/I	VISHAY	获取价格	Surface-Mount TMBSÂ® (Trench MOS Barrier Scho
V3P6-M3/84A	VISHAY	获取价格	DIODE 2.4 A, 60 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
V3P6-M3/85A	VISHAY	获取价格	DIODE 2.4 A, 60 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
V3P6-M3-84A	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
V3P6-M3-85A	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier

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