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V23990-P849-C58-PM PDF预览

V23990-P849-C58-PM

更新时间: 2024-10-28 21:18:59
品牌 Logo 应用领域
VINCOTECH
页数 文件大小 规格书
20页 1305K
描述
Insulated Gate Bipolar Transistor

V23990-P849-C58-PM 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.73Base Number Matches:1

V23990-P849-C58-PM 数据手册

 浏览型号V23990-P849-C58-PM的Datasheet PDF文件第2页浏览型号V23990-P849-C58-PM的Datasheet PDF文件第3页浏览型号V23990-P849-C58-PM的Datasheet PDF文件第4页浏览型号V23990-P849-C58-PM的Datasheet PDF文件第5页浏览型号V23990-P849-C58-PM的Datasheet PDF文件第6页浏览型号V23990-P849-C58-PM的Datasheet PDF文件第7页 
V23990-P849-A58/A59/C58/C59-PM  
preliminary datasheet  
flowPIM0 3rd Gen  
1200V/8A  
Features  
flow0 Housing  
2 Clips housing in 12 and 17mm height  
Trench Fieldstop Technology IGBT4  
Enhenced Rectifier  
Optional w/o BRC  
Target Applications  
Industrial Drives  
Schematics  
Embedded Generation  
Types  
V23990-P849-A58-PM 12mm height  
V23990-P849-A59-PM 17mm height  
V23990-P849-C58-PM 12mm height; w/o BRC  
V23990-P849-C59-PM 17mm height; w/o BRC  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Input Rectifier Diode  
Repetitive peak reverse voltage  
Forward current per diode  
Surge forward current  
VRRM  
IFAV  
1600  
36  
V
A
A
Th=80°C  
Tc=80°C  
DC current  
tp=10ms  
IFSM  
370  
Tj=25°C  
I2t  
A2s  
W
I2t-value  
360  
43  
Th=80°C  
Tc=80°C  
Ptot  
Tj=Tjmax  
Power dissipation per Diode  
Maximum Junction Temperature  
Tjmax  
175  
°C  
Transistor Inverter  
Collector-emitter voltage  
DC collector current  
VCE  
IC  
1200  
13  
V
A
Th=80°C  
Tc=80°C  
Tj=Tjmax  
Tj150°C  
Tj=Tjmax  
ICpuls  
Ptot  
VGE  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
24  
44  
A
Th=80°C  
Tc=80°C  
W
V
±20  
tSC  
Tj150°C  
10  
ms  
V
VCC  
VGE=15V  
800  
Tjmax  
Maximum Junction Temperature  
175  
°C  
copyright Vincotech  
1
Revision: 2  

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