Datasheet > V23990-P849-X4X-P2-14

V23990-P849-X4X-P2-14

更新时间： 2024-02-10 14:17:27

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	1393K
描述
Industrial Drives Embedded Generation

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中文翻译

获取价格

数据手册

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V23990-P849-X4X-P2-14 数据手册

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V23990-P849-A48/A49/C49/C49-PM

preliminary datasheet

flowPIM0 3rd Gen

1200V/8A

Features

flow0 Housing

● 2 Clips housing in 12 and 17mm height

● Trench Fieldstop Technology IGBT4

● Optional w/o BRC

Target Applications

● Industrial Drives

Schematics

● Embedded Generation

Types

● V23990-P849-A48-PM 12mm height

● V23990-P849-A49-PM 17mm height

● V23990ꢀP849ꢀC48ꢀPM 12mm height; w/o BRC

● V23990ꢀP849ꢀC49ꢀPM 17mm height; w/o BRC

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Doide

Repetitive peak reverse voltage

Forward current per diode

Surge forward current

V_RRM

I_FAV

1600

T_h=80°C

T_c=80°C

DC current

t_p=10ms

I_FSM

220

I²t

I2t-value

240

A2s

°C

T_h=80°C

T_c=80°C

P_tot

T_j=T_jmax

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

Transistor Inverter

Collector-emitter voltage

DC collector current

V_CE

I_C

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

I_Cpuls

P_tot

V_GE

tp limited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

T_h=80°C

T_c=80°C

±20

t_SC

T_j≤150°C

ꢁs

V_CC

V_GE=15V

800

T_jmax

Maximum Junction Temperature

175

°C

Revision: 2

12 3 4 5 6 7...20

中文翻译

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