Datasheet > V23990-P868-F49-PM

V23990-P868-F49-PM

更新时间： 2024-01-09 09:19:03

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	809K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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V23990-P868-F49-PM 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

V23990-P868-F49-PM 数据手册

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V23990-P868-F49/F48-PM

preliminary datasheet

flowPACK 0 3rd gen

1200V/15A

Features

flow0 housing

ꢀ 2 clip housing in 12mm and 17mm height

ꢀ Trench Fieldstop IGBT⁴technology

ꢀ Compact and low inductance design

ꢀ Built-in NTC

Target Applications

Schematic

ꢀ Motor Drives

ꢀ Power Generation

ꢀ UPS

Types

ꢀ V23990-P868-F49-PM: 17mm height

ꢀ V23990-P868-F48-PM: 12mm height

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Inverter Transistor

Collector-emitter voltage

DC collector current

V_CE

I_C

I_Cpulse

P_tot

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings*

T_h=80°C

T_c=80°C

V_GE

t_SC

V_CC

T_jꢀ150°C

V_GE=15V

800

ꢁs

T_jmax

Maximum Junction Temperature

175

°C

* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits

Inverter Diode

T_j=25°C

V_RRM

I_F

Peak Repetitive Reverse Voltage

DC forward current

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

I_FRM

P_tot

T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

T_h=80°C

T_c=80°C

°C

175

Thermal properties

Storage temperature

T_stg

T_op

-40…..+125

°C

Operation junction temperature

-40…..+Tjmax-25

Revision: 1

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