Datasheet > V23990-P868-F49-PM

V23990-P868-F49-PM

更新时间： 2024-01-09 10:40:33

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	809K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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技术参数
数据手册

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V23990-P868-F49-PM 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

V23990-P868-F49-PM 数据手册

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V23990-P868-F49/F48-PM

preliminary datasheet

Output Inverter

Figure 13

Output inverter FRED

Figure 14

Output inverter FRED

Typical reverse recovery charge as a

function of collector current

Q_rr= f(I_C)

Typical reverse recovery charge as a

function of IGBT turn on gate resistor

Q_rr= f(R_gon

)

3,2

2,4

1,6

0,8

Q_rr

3,2

2,4

1,6

0,8

Q_rr

( Ω)

150

I _C(A)

120

gon

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

°C

25/150

600

°C

ꢁ

R_gon

V_GE=

Figure 15

Output inverter FRED

Figure 16

Output inverter FRED

Typical reverse recovery current as a

function of collector current

Typical reverse recovery current as a

function of IGBT turn on gate resistor

I_RRM= f(I_C)

I_RRM= f(R_gon)

I_RRM

( Ω )

I _C(A)

120

150

gon

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

°C

25/150

600

°C

R_gon

V_GE=

ꢁ

Revision: 1

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