Datasheet > V23990-P868-F49-PM

V23990-P868-F49-PM

更新时间： 2024-01-08 11:27:34

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
15页	809K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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V23990-P868-F49-PM 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

V23990-P868-F49-PM 数据手册

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V23990-P868-F49/F48-PM

preliminary datasheet

Output Inverter

Figure 9

Output inverter IGBT

Figure 10

Output inverter IGBT

Typical switching times as a

function of collector current

t = f(I_C)

Typical switching times as a

function of gate resistor

t = f(R_G)

t_doff

t_don

t_doff

t_f

t_r

0,1

t_don

t_r

0,01

0,001

_C(A)

R _G( Ω )

150

100

125

inductive load

T_j=

V_CE

V_GE

R_gon

R_goff

T_j=

V_CE

V_GE

I_C=

150

600

°C

150

600

°C

ꢁ

Figure 11

Typical reverse recovery time as a

function of collector current

Output inverter FRED

Figure 12

Typical reverse recovery time as a

function of IGBT turn on gate resistor

Output inverter FRED

t_rr= f(I_C)

t_rr= f(R_gon)

0,75

0,8

t_rr

0,6

0,45

0,3

0,6

0,4

0,2

t_rr

0,15

( Ω )

150

I _C(A)

120

gon

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

°C

25/150

600

°C

R_gon

V_GE=

ꢁ

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