Datasheet > V23990-K218-F40-PM

V23990-K218-F40-PM

更新时间： 2023-09-03 20:39:42

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
15页	878K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-K218-F40-PM

T1,T2,T3,T4,T5,T6 / D1,D2,D3,D4,D5,D6

Figure 1

IGBT

Figure 2

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

V_CE(V)

t_p=

250

ꢀs

250

150

ꢀs

T_j=

°C

V_GEfrom

7 V to 17 V in steps of 1 V

Figure 3

IGBT

Figure 4

FWD

Typical transfer characteristics

Typical diode forward current as

a function of forward voltage

I_F= f(V_F)

I_C= f(V_GE

)

T_j= 25°C

T_j= T_jmax-25°C

T_j= 25°C

_GE(V)

V_F(V)

t_p=

250

ꢀs

250

ꢀs

V_CE

Revision: 2.1

1 2 345 6 7...15

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