型号 | 品牌 | 获取价格 | 描述 | 数据表 |
V23990-K219-F40-PM | VINCOTECH |
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem | |
V23990-K220-A40-/0A/-PM | VINCOTECH |
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Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel | |
V23990-K220-A40-/0B/-PM | VINCOTECH |
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Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel | |
V23990-K220-A40-/1A/-PM | VINCOTECH |
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Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel | |
V23990-K220-A40-/1B/-PM | VINCOTECH |
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Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel | |
V23990-K220-A40-0A-PM | VINCOTECH |
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Trench Fieldstop IGBT4 technology | |
V23990-K220-A40-0B-PM | VINCOTECH |
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Trench Fieldstop IGBT4 technology | |
V23990-K220-A40-1A-PM | VINCOTECH |
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Trench Fieldstop IGBT4 technology | |
V23990-K220-A40-1B-PM | VINCOTECH |
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Trench Fieldstop IGBT4 technology | |
V23990-K220-A40-PM | VINCOTECH |
获取价格 |
Trench Fieldstop IGBT4 technology |