是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.1 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 0.24 A | 最大漏源导通电阻: | 8.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UZVNL110ASTOA | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
UZVNL110ASTOB | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Met | |
UZVNL110G | DIODES |
获取价格 |
Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Met | |
UZVNL110GTA | ZETEX |
获取价格 |
Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Met | |
UZVNL110GTC | ZETEX |
获取价格 |
Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Met | |
UZVNL120ASTOA | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
UZVNL120ASTOB | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
UZVP0545A | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.045A I(D), 450V, 1-Element, P-Channel, Silicon, Me | |
UZVP0545ASTOA | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.045A I(D), 450V, 1-Element, P-Channel, Silicon, Me | |
UZVP0545ASTOB | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.045A I(D), 450V, 1-Element, P-Channel, Silicon, Me |