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UZNBG3116Q16 PDF预览

UZNBG3116Q16

更新时间： 2024-11-04 19:53:59
品牌 Logo 应用领域
捷特科 - ZETEX 光电二极管
页数 文件大小 规格书
15页 598K
描述
Analog Circuit, 1 Func, PDSO16, MO-137AB, QSOP-16

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中文翻译

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UZNBG3116Q16 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SSOP,Reach Compliance Code：unknown
HTS代码：8542.39.00.01风险等级：5.1
模拟集成电路 - 其他类型：ANALOG CIRCUITJESD-30 代码：R-PDSO-G16
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：16最高工作温度：80 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, SHRINK PITCH峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压 (Vsup)：10 V最小供电电压 (Vsup)：5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
温度等级：OTHER端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.635 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：3.9116 mmBase Number Matches：1

UZNBG3116Q16 数据手册

 浏览型号UZNBG3116Q16的Datasheet PDF文件第2页浏览型号UZNBG3116Q16的Datasheet PDF文件第3页浏览型号UZNBG3116Q16的Datasheet PDF文件第4页浏览型号UZNBG3116Q16的Datasheet PDF文件第5页浏览型号UZNBG3116Q16的Datasheet PDF文件第6页浏览型号UZNBG3116Q16的Datasheet PDF文件第7页 
FET BIAS CONTROLLER WITH POLARISATION  
SWITCH AND TONE DETECTION  
ISSUE 2 - JUNE 2006  
ZNBG3115  
ZNBG3116  
DEVICE DESCRIPTION  
The ZNBG series of devices are designed to meet the  
bias requirements of GaAs and HEMT FETs  
commonly used in satellite receiver LNBs, PMR,  
cellular telephones etc. with a minimum of external  
components.  
Drain current setting of the ZNBG3115/16 is user  
selectable over the range 0 to 15mA, this is achieved  
with addition of a single resistor. The series also offers  
the choice of drain voltage to be set for the FETs, the  
3115 gives 2.2 volts drain whilst the 3116 gives 2 volts.  
With the addition of two capacitors and a resistor the  
devices provide drain voltage and current control for  
three external grounded source FETs, generating  
the regulated negative rail required for FET gate  
biasing whilst operating from a single supply. This  
negative bias, at -2.8 volts, can also be used to  
supply other external circuits.  
These devices are unconditionally stable over the full  
working temperature with the FETs in place, subject to  
the inclusion of the recommended gate and drain  
capacitors. These ensure RF stability and minimal  
injected noise.  
It is possible to use less than the devices full  
complement of FET bias controls, unused drain and gate  
connections can be left open circuit without affecting  
operation of the remaining bias circuits.  
The ZNBG3115/16 includes bias circuits to drive up  
to three external FETs. A control input to the device  
selects either one of two FETs as operational, the  
third FET is permanently active. This feature is  
normally used as an LNB polarisation switch. Also  
specific to Universal LNB applications is the 22kHz  
tone detection and logic output feature which is  
used to enable high and low band frequency  
switching.  
To protect the external FETs the circuits have been  
designed to ensure that, under any conditions including  
power up/down transients, the gate drive from the bias  
circuits cannot exceed the range -3.5V to 1V.  
Additionally each stage has its own individual current  
limiter. Furthermore if the negative rail experiences a  
fault condition, such as overload or short circuit, the  
drain supply to the FETs will shut down avoiding  
excessive current flow.  
The ZNBG3115/16 has been designed to cope with  
DiSEqC™ ready set top boxes and rejects all  
transients from channel switching.  
The ZNBG3115/16 are available in QSOP16 and QSOP20  
for the minimum in device size. Device operating  
temperature is -40 to 80°C to suit a wide range of  
environmental conditions.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
•
•
Drives up to three FETs  
Private mobile radio (PMR)  
•
•
Dynamic FET protection  
Cellular telephones  
•
•
Drain current set by external resistor  
•
Regulated negative rail generator requires only  
2 external capacitors  
•
Choice in drain voltage  
•
Wide supply voltage range  
•
Polarisation switch for LNBs  
•
22kHz tone detection for band switching  
•
Tone detector ignores unwanted signals  
•
Support fr MIMIC, FET and Bipolar local  
oscillator devices  
•
Compliant with ASTRA control specifications  
•
QSOP 16 and 20 surface mount packages  
•
1
ISSUE 2 - JUNE 2006  
1234567...15

中文翻译

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