Datasheet > UZNBG3211Q20

UZNBG3211Q20

更新时间： 2024-11-04 19:54:03

品牌	Logo	应用领域
美台 - DIODES		光电二极管
页数	文件大小	规格书
16页	387K
描述
Analog Circuit, 1 Func, PDSO20, QSOP-20

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技术参数
数据手册

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UZNBG3211Q20 技术参数

生命周期：	Obsolete	零件包装代码：	QSOP
包装说明：	SSOP,	针数：	20
Reach Compliance Code：	unknown	HTS代码：	8542.39.00.01
风险等级：	5.04	模拟集成电路 - 其他类型：	ANALOG CIRCUIT
JESD-30 代码：	R-PDSO-G20	JESD-609代码：	e3
长度：	8.65 mm	湿度敏感等级：	1
功能数量：	1	端子数量：	20
最高工作温度：	70 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	SSOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, SHRINK PITCH
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
座面最大高度：	1.75 mm	最大供电电压 (Vsup)：	10 V
最小供电电压 (Vsup)：	5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	温度等级：	OTHER
端子面层：	MATTE TIN	端子形式：	GULL WING
端子节距：	0.635 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	3.9116 mm
Base Number Matches：	1

UZNBG3211Q20 数据手册

FET BIAS CONTROLLER WITH POLARISATION

SWITCH AND TONE DETECTION

ISSUE 2 - FEBRUARY 2000

ZNBG3210

ZNBG3211

DEVICE DESCRIPTION

The ZNBG series of devices are designed to

meet the bias requirements of GaAs and

HEMT FETs commonly used in satellite

receiver LNBs, PMR cellular telephones etc.

with a minimum of external components.

is achieved with the addition of a single

resistor. The series also offers the choice of

FET drain voltage, the 3210 gives 2.2 volts

drain whilst the 3211 gives 2 volts.

These devices are unconditionally stable

over the full working temperature with the

FETs in place, subject to the inclusion of the

recommended gate and drain capacitors.

These ensure RF stability and minimal

injected noise.

With the addition of two capacitors and a

resistorthedevices provide drainvoltageand

current control for three external grounded

source FETs, generating the regulated

negative rail required for FET gate biasing

whilst operating from a single supply. This

negative bias, at -3 volts, can also be used to

supply other external circuits.

It is possible to use less than the devices full

complement of FET bias controls, unused

drain and gate connections can be left open

circuit without affecting operation of the

remaining bias circuits.

The ZNBG3210/11 includes bias circuits to

drive up to three external FETs. A control

input to the device selects either one of two

FETs as operational using 0V gate switching

methodology, the third FET is permanently

active. This feature is particularly used as an

LNB polarisation switch. Also specific to LNB

applications is the enhanced 22kHz tone

detection and logic output feature which is

used to enable high and low band frequency

switching. The detector has been specifically

designed to reject inerference such as low

frequency signals and DiSEqC tone bursts

- without the use of additional external

components.

In order to protect the external FETs the

circuits have been designed to ensure that,

under any conditions including power

up/down transients, the gate drive from the

bias circuits cannot exceed the range -3.5V

to 1V. Furthermore if the negative rail

experiences a fault condition, such as

overload or short circuit, the drain supply to

the FETs will shut down avoiding excessive

current flow.

The ZNBG3210/11 are available in QSOP20

for the minimum in device size. Device

operating temperature is -40 to 70°C to suit

a wide range of environmental conditions.

Drain current setting of the ZNBG3210/11 is

user selectable over the range 0 to 15mA, this

FEATURES

APPLICATIONS

Provides bias for GaAs and HEMT FETs

Satellite receiver LNBs

•

Drives up to three FETs

Private mobile radio (PMR)

•

Dynamic FET protection

Cellular telephones

•

Drain current set by external resistor

•

Regulated negative rail generator

requires only 2 external capacitors

•

Choice in drain voltage

Wide supply voltage range

Polarisation switch for LNBs -

supporting zero volt gate switching

topology.

•

22kHz tone detection for band switching

Compliant with ASTRA control

specifications

•

QSOP surface mount package

•

67-1

12 3 4 5 6 7...16

中文翻译

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与UZNBG3211Q20相关器件

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