Datasheet > UZNBG6001Q20

UZNBG6001Q20

更新时间： 2024-11-04 15:56:27

品牌	Logo	应用领域
捷特科 - ZETEX		光电二极管
页数	文件大小	规格书
10页	407K
描述
Analog Circuit, 1 Func, PDSO20, QSOP-20

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技术参数
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UZNBG6001Q20 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	QSOP-20	Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01	风险等级：	5.3
模拟集成电路 - 其他类型：	ANALOG CIRCUIT	JESD-30 代码：	R-PDSO-G20
JESD-609代码：	e3	长度：	8.645 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	20	最高工作温度：	70 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	SSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.75 mm
最大供电电压 (Vsup)：	12 V	最小供电电压 (Vsup)：	5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
温度等级：	OTHER	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.635 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	3.9 mm

UZNBG6001Q20 数据手册

ZNBG4000 ZNBG4001

ZNBG6000 ZNBG6001

FET BIAS CONTROLLER

ISSUE 2 - JUNE 1998

DEVICE DESCRIPTION

The ZNBG series of devices are designed to

meet the bias requirements of GaAs and

HEMT FETs commonly used in satellite

receiver LNBs, PMR, cellular telephones etc.

with a minimum of external components.

These devices are unconditionally stable

over the full working temperature with the

FETs in place, subject to the inclusion of the

recommended gate and drain capacitors.

These ensure RF stability and minimal

injected noise.

With the addition of two capacitors and

resistors the devices provide drain voltage

and current control for a number of external

grounded source FETs, generating the

regulated negative rail required for FET gate

biasing whilst operating from a single

supply. This negative bias, at -3 volts, can

also be used to supply other external

circuits.

It is possible to use less than the devices full

complement of FET bias controls, unused

drain and gate connections can be left open

circuit without affecting operation of the

remaining bias circuits.

In order to protect the external FETs the

circuits have been designed to ensure that,

under any conditions including power

up/down transients, the gate drive from the

bias circuits cannot exceed the range -3.5V

to 0.7V. Furthermore if the negative rail

experiences a fault condition, such as

overload or short circuit, the drain supply to

the FETs will shut down avoiding excessive

current flow.

The ZNBG4000/1 and ZNBG6000/1 contain

four and six bias stages respectively. In

setting drain current the ZNBG4000/1 two

resistors allows individual FET pair control

to different levels, the ZNBG6000/1 two

resistors split control between two and four

FETs. This allows the operating current of

input FETs to be adjusted to minimise noise,

whilst the following FET stages can

separately be adjusted for maximum gain.

The series also offers the choice of drain

voltage to be set for the FETs, the

ZNBG4000/6000 gives 2.2 volts drain whilst

the ZNBG4001/6001 gives 2 volts.

The ZNBG4000/1 and ZNBG6000/1 are

available in QSOP16 and 20 pin packages

respectively for the minimumindevicessize.

Device operating temperature is -40 to 70°C

to suit a wide range of environmental

conditions.

FEATURES

APPLICATIONS

Provides bias for GaAs and HEMT FETs

Satellite receiver LNBs

•

Drives up to four or six FETs

Private mobile radio (PMR)

•

Dynamic FET protection

Cellular telephones

•

Drain current set by external resistor

•

Regulated negative rail generator

requires only 2 external capacitors

•

Choice in drain voltage

•

Wide supply voltage range

•

QSOP surface mount package

•

4-137

12 3 4 5 6 7...10

中文翻译

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UZP1A330MCL	NICHICON	获取价格	ALUMINUM ELECTROLYTIC CAPACITORS
UZP1A330MCL1GB	NICHICON	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 3
UZP1A330MCR1GB	NICHICON	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 3
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