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UZMV835B PDF预览

UZMV835B

更新时间: 2024-11-04 17:18:35
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 43K
描述
Variable Capacitance Diode, 68pF C(T), 25V, Silicon,

UZMV835B 技术参数

生命周期:Obsolete包装说明:R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.25
最小击穿电压:25 V配置:SINGLE
二极管电容容差:5%最小二极管电容比:5
标称二极管电容:68 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.33 W认证状态:Not Qualified
最小质量因数:100表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

UZMV835B 数据手册

 浏览型号UZMV835B的Datasheet PDF文件第2页 

与UZMV835B相关器件

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Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2
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UZMV930TC DIODES

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UZMV931TA DIODES

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Variable Capacitance Diode, Very High Frequency, 7.15pF C(T), 12V, Silicon, Hyperabrupt, S
UZMV931TC DIODES

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Variable Capacitance Diode, Very High Frequency, 7.15pF C(T), 12V, Silicon, Hyperabrupt, S
UZMV932TA DIODES

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Variable Capacitance Diode, Very High Frequency, 9.5pF C(T), 12V, Silicon, Hyperabrupt, SO
UZMV932TC DIODES

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Variable Capacitance Diode, Very High Frequency, 9.5pF C(T), 12V, Silicon, Hyperabrupt, SO
UZMV933ATA DIODES

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Variable Capacitance Diode, Very High Frequency, 12V, Silicon, Hyperabrupt, SOD-323, 2 PIN
UZMV933ATC DIODES

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Variable Capacitance Diode, Very High Frequency, 12V, Silicon, Hyperabrupt, SOD-323, 2 PIN
UZMV933TC DIODES

获取价格

Variable Capacitance Diode, Very High Frequency, 22.5pF C(T), 12V, Silicon, Hyperabrupt, S