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UZMV834A PDF预览

UZMV834A

更新时间: 2024-11-04 17:18:35
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 43K
描述
Variable Capacitance Diode, 47pF C(T), 25V, Silicon

UZMV834A 技术参数

生命周期:Obsolete包装说明:R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.26
最小击穿电压:25 V配置:SINGLE
最小二极管电容比:5标称二极管电容:47 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.33 W
认证状态:Not Qualified最小质量因数:200
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

UZMV834A 数据手册

 浏览型号UZMV834A的Datasheet PDF文件第2页 

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Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2
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Variable Capacitance Diode, 47pF C(T), 25V, Silicon,
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Variable Capacitance Diode, 47pF C(T), 25V, Silicon
UZMV834BTA DIODES

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Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2
UZMV834BTC DIODES

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Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2
UZMV835A DIODES

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Variable Capacitance Diode, 68pF C(T), 25V, Silicon,
UZMV835ATA DIODES

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Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2
UZMV835B DIODES

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Variable Capacitance Diode, 68pF C(T), 25V, Silicon,
UZMV835BTA DIODES

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Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-2
UZMV930TA DIODES

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Variable Capacitance Diode, Very High Frequency, 4.9pF C(T), 12V, Silicon, Hyperabrupt, SO