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UTT60N10G-TN3-R PDF预览

UTT60N10G-TN3-R

更新时间: 2024-11-30 20:08:07
品牌 Logo 应用领域
友顺 - UTC 开关脉冲晶体管
页数 文件大小 规格书
3页 147K
描述
Power Field-Effect Transistor,

UTT60N10G-TN3-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.64雪崩能效等级(Eas):270 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):155 pFJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):114 W
最大脉冲漏极电流 (IDM):100 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):350 ns最大开启时间(吨):455 ns
Base Number Matches:1

UTT60N10G-TN3-R 数据手册

 浏览型号UTT60N10G-TN3-R的Datasheet PDF文件第2页浏览型号UTT60N10G-TN3-R的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UTT60N10  
Preliminary  
Power MOSFET  
60A, 100V N-CHANNEL  
ENHANCEMENT MODE POWER  
MOSFET TRANSISTOR  
DESCRIPTION  
The UTC UTT60N10 is an N-channel enhancement power  
MOSFET using UTC’s advanced technology to provide the  
customers with perfect RDS(ON), high switching speed, high current  
capacity and low gate charge.  
The UTC UTT60N10 is suitable for motor control, AC-DC or  
DC-DC converters and audio amplifiers, etc.  
FEATURES  
* RDS(ON)<24m@ VGS=10V,ID=30A  
* High Switching Speed  
* High Current Capacity  
* Low Gate Charge(typical 50nC)  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
S
S
S
UTT60N10L-TA3-T  
UTT60N10L-TN3-T  
UTT60N10L-TN3-R  
UTT60N10G-TA3-T  
UTT60N10G-TN3-T  
UTT60N10G-TN3-R  
TO-220  
TO-252  
TO-252  
G
G
G
Tube  
Tube  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R502-664.c  

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