Datasheet > UTT6N10Z

UTT6N10Z

更新时间： 2024-06-27 12:11:00

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	395K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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UTT6N10Z 数据手册

SMD Type

MOSFET

Transistors

N-Channel Power MOSFET

UTT6N10Z

■ Features

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

● RDS(on) = 80mΩ @VGS = 10V,ID=6A

● High Switching Speed

● Low Crss (Typically 3.1pF)

● Low Gate Charge (Typically 4.3nC)

2.Drain

0.250

2.30 (typ)

0.84 (max)

Gauge Plane

0.66 (min)

1.Gate

2.Drain

3.Source

4.Drain

4.60 (typ)

3.Source

■Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

100

Unit

VDS

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

Single Pulsed Avalanche Energy (Note1)

Power Dissipation

2.2

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

150

-55 to 150

℃

Storage Temperature Range

stg

Note1: Starting TJ=25°C, L=11mH, IAS =6A, VDD=90V, VGS =10V.

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