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UTT60N10G-TN3-T PDF预览

UTT60N10G-TN3-T

更新时间: 2024-11-30 20:08:07
品牌 Logo 应用领域
友顺 - UTC 开关脉冲晶体管
页数 文件大小 规格书
3页 147K
描述
Power Field-Effect Transistor

UTT60N10G-TN3-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.64
雪崩能效等级(Eas):270 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):155 pF
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):114 W最大脉冲漏极电流 (IDM):100 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):350 ns
最大开启时间(吨):455 nsBase Number Matches:1

UTT60N10G-TN3-T 数据手册

 浏览型号UTT60N10G-TN3-T的Datasheet PDF文件第2页浏览型号UTT60N10G-TN3-T的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UTT60N10  
Preliminary  
Power MOSFET  
60A, 100V N-CHANNEL  
ENHANCEMENT MODE POWER  
MOSFET TRANSISTOR  
DESCRIPTION  
The UTC UTT60N10 is an N-channel enhancement power  
MOSFET using UTC’s advanced technology to provide the  
customers with perfect RDS(ON), high switching speed, high current  
capacity and low gate charge.  
The UTC UTT60N10 is suitable for motor control, AC-DC or  
DC-DC converters and audio amplifiers, etc.  
FEATURES  
* RDS(ON)<24m@ VGS=10V,ID=30A  
* High Switching Speed  
* High Current Capacity  
* Low Gate Charge(typical 50nC)  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
S
S
S
UTT60N10L-TA3-T  
UTT60N10L-TN3-T  
UTT60N10L-TN3-R  
UTT60N10G-TA3-T  
UTT60N10G-TN3-T  
UTT60N10G-TN3-R  
TO-220  
TO-252  
TO-252  
G
G
G
Tube  
Tube  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R502-664.c  

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