是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.62 |
雪崩能效等级(Eas): | 790 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 700 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 52 W | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
12N70G-TF3T-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
12N70KG-TF1-T | UTC |
获取价格 |
N-CHANNEL POWER MOSFET | |
12N70KL-TF1-T | UTC |
获取价格 |
N-CHANNEL POWER MOSFET | |
12N70K-MT | UTC |
获取价格 |
N-CHANNEL POWER MOSFET | |
12N70L-TA3-T | UTC |
获取价格 |
12 Amps, 700 Volts N-CHANNEL MOSFET | |
12N70L-TC-T2Q-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
12N70L-TC-TF1-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
12N70L-TF1-T | UTC |
获取价格 |
12 Amps, 700 Volts N-CHANNEL MOSFET | |
12N70L-TF2-T | UTC |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
12N70L-TF3-T | UTC |
获取价格 |
12 Amps, 700 Volts N-CHANNEL MOSFET |