Datasheet > UT62L6416(E)

UT62L6416(E)

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	115K
描述
ASYNCHRONOUS STATIC RAM- High Speed

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UT62L6416(E) 数据手册



UTRON

UT62L6416

64K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.1

TIMING WAVEFORMS

READ CYCLE 1 (Address Controlled)

(1,2)

t^RC

Address

t^AA

t^OH

Previous data valid

Dout

Data Valid

READ CYCLE 2 (

and

Controlled)

(1,3,4,5)

t^RC

Address

t^AA

tACE

t^BA

LB , UB

t^BHZ

t^BLZ

t^CHZ

t^OHZ

t^OH

t^OE

t^CLZ

t^OLZ

Dout

High-Z

Data Valid

Notes :

is high for read cycle.

2.Device is continuously selected

=low,

LB UB

=low_.

3.Address must be valid prior to or coincident with

=low_,

=low transition; otherwise t_AAis the limiting parameter.

LB UB

4.t_CLZ, t_BLZ, t_OLZ, t_CHZ, t_BHZand t_OHZare specified with C_L=5pF. Transition is measured 500mV from steady state.

5.At any given temperature and voltage condition, t_CHZis less than t_CLZ, t_BHZis less than t_BLZ, t_OHZis less than t_OLZ

UTRON TECHNOLOGY INC.

P80073

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882

FAX: 886-3-5777919

1...3 4 567 8 9...13

下载PDF

与UT62L6416(E)相关器件

型号	品牌	描述	获取价格	数据表
UT62L6416(I)	ETC	ASYNCHRONOUS STATIC RAM- High Speed	获取价格
UT62L6416BS-55L	ETC	64K X 16 BIT LOW POWER CMOS SRAM	获取价格
UT62L6416BS-55LE	ETC	64K X 16 BIT LOW POWER CMOS SRAM	获取价格
UT62L6416BS-55LL	ETC	64K X 16 BIT LOW POWER CMOS SRAM	获取价格
UT62L6416BS-55LLE	ETC	64K X 16 BIT LOW POWER CMOS SRAM	获取价格
UT62L6416BS-70L	ETC	64K X 16 BIT LOW POWER CMOS SRAM	获取价格