Datasheet > UT62L6416MC-70LLE

UT62L6416MC-70LLE

更新时间： 2024-11-24 08:21:35

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
12页	194K
描述
64K X 16 BIT LOW POWER CMOS SRAM

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

UTRON

UT62L6416

64K X 16 BIT LOW POWER CMOS SRAM

Preliminary Rev. 0.1

FEATURES

GENERAL DESCRIPTION

The UT62L6416 is a 1,048,576-bit low power

CMOS static random access memory organized

as 65,536 words by 16 bits.

ꢀ Fast access time :

55ns(max) for Vcc=3.0V~3.6V

70/100ns(max) for Vcc=2.7V~3.6V

ꢀ CMOS Low operating power

The UT62L6416 operates from a single 2.7V ~

3.6V power supply and all inputs and outputs are

fully TTL compatible.

Operating current: 45/35/25mA (Icc max)

Standby current: 20 uA(TYP.) L-version

3 uA(TYP.) LL-version

ꢀ Single 2.7V~3.6V power supply

ꢀ Operating temperature:

The UT62L6416 is design for upper and low byte

access by data byte control(

℃

UB LB

Commercial : 0 ~70

℃

Extended : -20 ~80

ꢀ All inputs and outputs TTL compatible

ꢀ Fully static operation

PIN DESCRIPTION

ꢀ Three state outputs

ꢀ Data retention voltage: 1.5V (min)

SYMBOL

DESCRIPTION

Address Inputs

ꢀ Data byte control :

(I/O1~I/O8)

(I/O9~I/O16)

Ⅱ

A0 - A15

I/O1 - I/O16

Data Inputs/Outputs

Chip Enable Input

Write Enable Input

Output Enable Input

Lower-Byte Control

High-Byte Control

ꢀ Package : 44-pin 400mil TSOP

V_CC

V_SS

48-pin 6mm × 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

Power Supply

Ground

No Connection

MEMORY ARRAY

ROW

1024 Rows x 64 Columns x 16 bits

DECODER

A12

A13

A14

A15

. . .

COLUMNI/O

I/O

I/O1

CONTROL

I/O16

COLUMN DECODER

LOGIC

CONTROL

A11 A10 A9 A7 A6 A5

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

P80073

12 3 4 5 6 7...12

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