Datasheet > UT62L6416(E)

UT62L6416(E)

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	115K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L6416(E) 数据手册

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UTRON

UT62L6416

64K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.1

℃

CAPACITANCE (T_A=25 , f=1.0MHz)

PARAMETER

Input Capacitance

SYMBOL

MIN.

MAX

UNIT

C_IN

C_I/O

Input/Output Capacitance

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

Input Pulse Levels

0V to 3.0V

5ns

1.5V

Input Rise and Fall Times

Input and Output Timing Reference Levels

Output Load

C_L= 30pF, I_OH/I_OL= -1mA / 2.1mA

℃

AC ELECTRICAL CHARACTERISTICS

(V_CC=2.7V~3.6V, T_A=0 to 70 / -20 to 85 (E))

(1) READ CYCLE

PARAMETER

SYMBOL

UT62L6416-55

UT62L6416-70

UNIT

MIN.

MAX.

MIN.

MAX.

Read Cycle Time

Address Access Time

Chip Enable Access Time

Output Enable Access Time

Chip Enable to Output in Low Z

Output Enable to Output in Low Z

Chip Disable to Output in High Z

Output Disable to Output in High Z

Output Hold from Address Change

t_RC

t_AA

t_ACE

t_OE

t_CLZ*

t_OLZ*

t_CHZ*

t_OHZ*

t_OH

t_BA

Access Time

LB UB

t_BHZ

t_BLZ

to High-Z Output

to Low-Z Output

LB UB

(2) WRITE CYCLE

PARAMETER

SYMBOL

UT62L6416-55

UT62L6416-70

UNIT

MIN.

MAX.

MIN.

MAX.

Write Cycle Time

t_WC

t_AW

t_CW

t_AS

t_WP

t_WR

t_DW

t_DH

Address Valid to End of Write

Chip Enable to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Data to Write Time Overlap

Data Hold from End of Write Time

Output Active from End of Write

Write to Output in High Z

t_OW*

t_WHZ*

t_BW

Valid to End of Write

LB UB

*These parameters are guaranteed by device characterization, but not production tested.

UTRON TECHNOLOGY INC.

P80073

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882

FAX: 886-3-5777919

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