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UT61L12816 PDF预览

UT61L12816

更新时间: 2024-11-05 23:41:07
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
8页 66K
描述
ASYNCHRONOUS STATIC RAM- High Speed

UT61L12816 数据手册

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UTRON  
UT61L12816  
128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.0  
REVISION HISTORY  
REVISION  
DESCRIPTION  
Date  
Preliminary Rev. 0.1 Original.  
Oct.25,2002  
May.20,2003  
Rev. 1.0  
1. Revised Standby current : 10/2mA(max)0.5mA(typ.)  
2. Delete ICC1, ICC2  
3. Revised ISB : 30mA3mA, ISB1:10mA2mA,  
4. Add ISB & ISB1 (typ.) : 1mA & 2mA  
5. Add Overshoot : VIH +6.0V for t tRC /2.  
Undershoot : VIL -2.0V for t tRC /2.  
6. Revised Data retention IDR (max) : 3mA1Ma  
7. Add order information for lead free product  
UTRON TECHNOLOGY INC.  
P80081  
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.  
TEL: 886-3-5777882  
FAX: 886-3-5777919  
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