Datasheet > UT61L25616

UT61L25616

更新时间： 2024-11-19 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	88K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT61L25616 数据手册



UTRON

UT61L25616

256K X 16 BIT HIGH SPEED CMOS SRAM

Rev. 1.0

REVISION HISTORY

REVISION

DESCRIPTION

Date

Preliminary Rev. 0.1 Original.

Preliminary Rev. 0.2 1. Revised Pin number

Sep.04,2002

Oct.28,2002

May 20,2003

Rev. 1.0

1. Revised Standby current : 10/2mA(max)ꢀ0.5mA(typ.)

2. Delete I_CC1, I_CC2

3. Revised I_SB: 30mAꢀ3mA, I_SB1:10mAꢀ2mA,

4. Add I_SB& I_SB1(typ.) : 1mA & 2mA

5. Add Overshoot : V_IH≤ +6.0V for t ≤ tRC /2.

Undershoot : V_IL≤ -2.0V for t ≤ tRC /2.

6. Revised Data retention I_DR(max) : 3mAꢀ1mA

7. Add order information for lead free product

UTRON TECHNOLOGY INC.

P80076

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882

FAX: 886-3-5777919

12 3 4 5 6 7...12

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