是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.66 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT5504G-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT5504L-S08-R | UTC |
获取价格 |
Small Signal Field-Effect Transistor | |
UT5504L-S08-T | UTC |
获取价格 |
Small Signal Field-Effect Transistor | |
UT5504L-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT5504L-TN3-R | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT5504L-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT55N03G-K08-3030-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT55N03G-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT55N03L-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT55N03L-TND-R | UTC |
获取价格 |
Power Field-Effect Transistor, |