是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.68 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 60 A | 最大漏源导通电阻: | 0.023 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT60N03G-TN3-T | UTC |
获取价格 |
30V, 60A N-CHANNEL LOGIC LEVEL MOSFET | |
UT60N03G-TND-R | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT60N03L-TA3-T | UTC |
获取价格 |
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE | |
UT60N03L-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT60N03L-TN3-R | UTC |
获取价格 |
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE | |
UT60N03L-TN3-T | UTC |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Met | |
UT60N03L-TND-R | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT60N03-TN3-R | UTC |
获取价格 |
Transistor | |
UT60N03-TN3-T | UTC |
获取价格 |
Transistor | |
UT60N04G-TMS-T | UTC |
获取价格 |
Power Field-Effect Transistor, |