是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.68 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 2.6 A |
最大漏源导通电阻: | 0.13 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT3409G-AE3-R | UTC |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Met | |
UT3409G-AL3-R | UTC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
UT3409L-AE2-R | UTC |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Met | |
UT3409L-AE3-R | UTC |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Met | |
UT3409L-AL3-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3413 | UTC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE | |
UT3413_15 | UTC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE | |
UT3413G-AE2-R | UTC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE | |
UT3413G-AE3-R | UTC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE | |
UT3413L-AE2-R | UTC |
获取价格 |
P-CHANNEL ENHANCEMENT MODE |