Datasheet > UT2309A-AE3-R

UT2309A-AE3-R

更新时间： 2024-11-25 07:08:59

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UT2309A-AE3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT2309A

Power MOSFET

P-CHANNEL

ENHANCEMENT MODE

DESCRIPTION

The UT2309A is P-channel Power MOSFET, designed

with high density cell with fast switching speed, ultra low

on-resistance, excellent thermal and electrical capabilities.

Used in commercial and industrial surface mount applications

and suited for low voltage applications such as DC/DC

converters.

SYMBOL

3.Drain

2.Gate

*Pb-free plating product number: UT2309AL

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Normal

Lead Free Plating

UT2309AL-AE3-R

UT2309A-AE3-R

Tape Reel

MARKING

www.unisonic.com.tw

1 of 4

QW-R502-148.A

12 3 4

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型号	品牌	获取价格	描述	数据表
UT2309AL-AE3-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT2309G-AE3-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT2309-H	UTC	获取价格	P-CH
UT2309L-AE3-R	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE
UT230GG-AE2-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE
UT2311	UTC	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
UT2311_15	UTC	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT2311G-AE3-R	UTC	获取价格	Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Meta
UT2311L-AE3-R	UTC	获取价格	Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Meta
UT2311L-F-AE2-R	UTC	获取价格	Power Field-Effect Transistor,