Datasheet > UT2309-H

UT2309-H

更新时间： 2023-12-06 20:10:47

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P-CH

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UT2309-H 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UT2309-H

Preliminary

Power MOSFET

-3.7A, -30V P-CHANNEL

ENHANCEMENT MODE

POWER MOSFET



DESCRIPTION

The UTC UT2309-H is P-Channel enhancement mode power

field effect transistors are using trench DMOS technology. This

advanced technology has been especially tailored to minimize

on-state resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode. These devices are well suited for high efficiency fast

switching applications.



FEATURES

* R_DS(ON)< 75 mΩ @ V_GS=-10V, I_D=-3.0A

_DS(ON)< 120 mΩ @ V_GS=-4.5V, I_D=-2.0A

* Extremely low on-resistance due to high density cell

* Perfect thermal performance and electrical capability with

advanced technology of trench process



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

UT2309L-AE2-R

Halogen Free

UT2309G-AE2-R

UT2309G-AE3-R

SOT-23-3

SOT-23

Tape Reel

UT2309L-AE3-R

Note: Pin Assignment: G: Gate

S: Source

D: Drain

www.unisonic.com.tw

1 of 6

QW-R210-051.b

12 3 4 5 6

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