Datasheet > US5U2

US5U2

更新时间： 2024-09-25 06:01:23

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	78K
描述
4V Drive Nch+SBD MOSFET

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中文翻译

获取价格

数据手册

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US5U2 数据手册

US5U2

Transistors

4V Drive Nch+SBD MOSFET

US5U2

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET /

Schottky barrier diode

TUMT5

2.0

1.3

zFeatures

1) Nch MOSFET and schottky barrier diode

are put in TUMT5 package.

2) High-speed switching, Low On-resistance.

3) 4V drive.

4) Built-in Low V^Fschottky barrier diode.

Abbreviated symbol : U02

zApplications

Switching

zPackaging specifications

zInner circuit

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

US5U2

∗2

∗1

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

(1)

(2)

(3)

∗1 ESD protection diode

∗2 Body diode

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Drain-source voltage

Gate-source voltage

Continuous

1.4

5.6

0.6

5.6

0.7

Drain current

Pulsed

∗1

I_DP

I_S

Source current

(Body diode)

Continuous

∗1

∗2

Pulsed

I_SP

P_D

Power dissipation

W / ELEMENT

Channel temperature

Tch

150

°C

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Rev.B

1/4

12 3 4 5

中文翻译

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