Datasheet > US5U38

US5U38

更新时间： 2024-09-25 06:01:23

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	132K
描述
2.5V Drive Pch+SBD MOSFET

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中文翻译

获取价格

数据手册

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US5U38 数据手册

US5U38

Transistor

2.5V Drive Pch+SBD MOSFET

US5U38

zDimensions (Unit : mm)

zStructure

Silicon P-channel MOSFET

Schottky Barrier DIODE

TUMT5

2.0

1.3

zFeatures

1) The US5U38 combines Pch MOSFET with a

Schottky barrier diode in a TUMT5 package.

2) Low on-resistance with fast switching.

3) Low voltage drive (2.5V).

Abbreviated symbol : U38

4) Built-in schottky barrier diode has low forward voltage.

zEquivalent circuit

zApplications

(5)

(4)

Switching

∗2

zPackaging specifications

Package

Taping

Code

Type

∗1

(1)Gate

Basic ordering unit (pieces)

3000

(2)Source

(3)Anode

(4)Cathode

(5)Drain

(1)

(2)

(3)

US5U38

∗1 ESD protection diode

∗2 Body diode

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

V_DSS

V_GSS

I_D

Limits

−20

Unit

Drain-source voltage

Gate-source voltage

Continuous

1.0

Drain current

Pulsed

∗1

I_DP

I_S

4.0

Continuous

Pulsed

−0.4

−4.0

150

0.7

Source current

(Body diode)

∗1

∗3

I_SP

Tch

Channel temperature

Power dissipation

°C

W / ELEMENT

<Di>

Repetitive peak reverse voltage

Reverse voltage

V_RM

V_R

I_F

Forward current

0.7

3.0

150

0.5

∗2

∗3

Forward current surge peak

Junction temperature

Power dissipation

I_FSM

°C

W / ELEMENT

∗3

Power dissipation

P_D

1.0

W / TOTAL

Range of storage temperature

Tstg

−55 to +150

°C

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz 1cyc. ∗3 Mounted on a ceramic board

•

1/5

12 3 4 5 6

中文翻译

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