Datasheet > US5U3_1

US5U3_1

更新时间： 2024-09-25 03:22:59

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	64K
描述
2.5V Drive Nch+SBD MOSFET

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中文翻译

获取价格

数据手册

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US5U3_1 数据手册

US5U3

Transistors

2.5V Drive Nch+SBD MOSFET

US5U3

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET /

Schottky barrier diode

TUMT5

2.0

1.3

0.85Max.

0.77

0.65 0.65

(5) (4)

zFeatures

0~0.1

1) Nch MOSFET and schottky barrier diode

are put in TUMT5 package.

(2) (3)

0.3

(1)

2) High-speed switching, Low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in Low V^Fschottky barrier diode.

0.17

Abbreviated symbol : U03

zApplications

Switching

zPackage specifications

zInner circuit

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

US5U3

∗2

∗1

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

(1)

(2)

(3)

∗1 ESD protection diode

∗2 Body diode

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Gate-source voltage

Continuous

Pulsed

1.5

6.0

0.6

6.0

0.7

Drain current

∗1

I_DP

I_S

Source current

(Body diode)

Continuous

Pulsed

∗1

∗2

I_SP

P_D

Power dissipation

W / ELEMENT

Channel temperature

Tch

150

°C

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

<Di>

Parameter

Symbol

V_RM

V_R

Limits

Unit

Repetitive peak reverse voltage

Reverse voltage

0.7

3.0

0.5

I_F

Forward current

∗1

I_FSM

P_D

Forward current surge peak

Power dissipation

Junction temperature

∗1 60Hz 1cycle

∗2 Mounted on ceramic board

W / ELEMENT

°C

∗2

150

Rev.A

1/3

12 3 4

中文翻译

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