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UPS540E3

更新时间： 2024-11-30 03:56:51
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
6页 268K
描述
5 A Schottky Barrier Rectifier

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中文翻译

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UPS540E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PSSO-G2
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.4应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.54 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3最大非重复峰值正向电流：100 A
元件数量：1相数：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：40 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

UPS540E3 数据手册

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UPS540e3  
5 A Schottky Barrier Rectifier  
KEY FEATURES  
DESCRIPTION  
This UPS540e3 in the Powermite3® package is a high efficiency Schottky  
rectifier that is also RoHS compliant offering high current/power capabilities  
previously found only in much larger packages. They are ideal for SMD  
applications that operate at high frequencies. In addition to its size  
advantages, the Powermite3® package includes a full metallic bottom that  
eliminates the possibility of solder flux entrapment during assembly and a  
unique locking tab act as an efficient heat path to the heat-sink mounting.  
Its innovative design makes this device ideal for use with automatic insertion  
equipment.  
ƒ
ƒ
Very low thermal resistance package  
RoHS Compliant with e3 suffix part  
number  
Guard-ring-die construction for transient  
protection  
Efficient heat path with Integral locking  
bottom metal tab  
Low forward voltage  
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ƒ
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ƒ
Full metallic bottom eliminates flux  
entrapment  
ƒ
ƒ
ƒ
Compatible with automatic insertion  
Low profile-maximum height of 1mm  
Options for screening in accordance with  
MIL-PRF-19500 for JAN, JANTX, and  
JANTXV are available by adding MQ, MX,  
or MV prefixes respectively to part  
numbers. For example, designate  
MXUPS540e3 for a JANTX (consult  
factory for Tin-Lead plating).  
Optional 100% avionics screening  
available by adding MA prefix for 100%  
temperature cycle, thermal impedance  
and 24 hours HTRB (consult factory for  
Tin-Lead plating)  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
ƒ
40  
V
RMS Reverse Voltage  
28  
5
V
A
V R (RMS)  
Io  
Average Rectified Output Current  
APPLICATIONS/BENEFITS  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on Rated Load@ Tc =90 ºC  
100  
A
IFSM  
ƒ
ƒ
ƒ
Switching and Regulating Power  
Supplies.  
Silicon Schottky (hot carrier) rectifier for  
minimal reverse voltage recovery  
Elimination of reverse-recovery  
oscillations to reduce need for EMI  
filtering  
Storage Temperature  
Junction Temperature  
TSTG  
TJ  
-55 to +150  
-55 to +125  
ºC  
ºC  
THERMAL CHARACTERISTICS  
ƒ
ƒ
Charge Pump Circuits  
Reduces reverse recovery loss with low  
IRM  
Thermal Resistance  
Junction-to-case (bottom)  
Junction to ambient (1)  
RθJC  
RθJA  
3.2  
65  
ºC/ Watt  
ºC/ Watt  
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print  
ƒ
Small foot print  
190 X 270 mils (1:1 Actual size)  
See mounting pad details on pg 3  
Powermite 3™  
MECHANICAL & PACKAGING  
•
•
CASE: Void-free transfer molded  
thermosetting epoxy compound meeting  
UL94V-0  
FINISH: Annealed matte-Tin plating over  
copper and readily solderable per MIL-  
STD-750 method 2026 (consult factory  
for Tin-Lead plating)  
•
•
•
•
•
POLARITY: See figure (left)  
MARKING: S540•  
WEIGHT: 0.072 gram (approx.)  
Package dimension on last page  
Tape & Reel option: 16 mm tape per  
Standard EIA-481-B, 5000 on 13” reel  
Copyright © 2007  
6-26-2007 Rev D  
Microsemi  
Page 1  
123456

中文翻译

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