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UPS5819E3/TR13 PDF预览

UPS5819E3/TR13

更新时间: 2024-12-01 15:56:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞄准线二极管
页数 文件大小 规格书
4页 417K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERMITE-1

UPS5819E3/TR13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-216
包装说明:S-PSSO-G1针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.27
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:DO-216AA
JESD-30 代码:S-PSSO-G1JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1端子数量:1
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

UPS5819E3/TR13 数据手册

 浏览型号UPS5819E3/TR13的Datasheet PDF文件第2页浏览型号UPS5819E3/TR13的Datasheet PDF文件第3页浏览型号UPS5819E3/TR13的Datasheet PDF文件第4页 
UPS5817e3  
Schottky Barrier Rectifier  
Main product characteristics  
IO  
1A  
VRRM  
20V  
Tj(MAX)  
VF(MAX)  
150ºC  
0.45V  
Features and benefits  
Low forward voltage drop  
Low profile package height  
Efficient heat path with integral locking bottom metal tab  
Low thermal resistance DO-216AA package  
Powermite 1  
(DO-216AA)  
Description and applications  
Single schottky rectifier assembled in Powermite 1® package which features a full metallic bottom that  
eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique  
locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with  
very low thermal resistance junction to case (bottom).  
This product is suitable for use in switching and regulating power supplies and also charge pump  
circuits.  
Absolute maximum ratings(1)  
Symbol  
Parameter  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
20  
V
VR(RMS)  
RMS Reverse Voltage  
14  
V
A
Average rectified forward output current  
(TC = 135ºC)  
IO  
1.0  
Peak repetitive forward current  
(100kHz square wave, TC = 135ºC)  
Non repetitive peak forward surge current  
(8.3ms single half sine wave)  
IFRM  
IFSM  
2.0  
50  
A
A
dV/dt  
TSTG  
TJ  
Voltage rate of change (at max VR)  
Storage temperature  
10000  
V/µs  
ºC  
-55 to +150  
-55 to +150  
Junction temperature  
ºC  
(1) All ratings at 25ºC unless specified otherwise  
Copyright © 2008  
June 2008 Rev E  
1/4  
www.Microsemi.com  

UPS5819E3/TR13 替代型号

型号 品牌 替代类型 描述 数据表
UPS5819E3TR7 MICROSEMI

完全替代

1A, SILICON, SIGNAL DIODE, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE 1, DO-216, 1 PIN
UPS5819E3/TR7 MICROSEMI

类似代替

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA, HALOGEN FREE AND
STPS1L40M STMICROELECTRONICS

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LOW DROP POWER SCHOTTKY RECTIFIER

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