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UPS540E3/TR13 PDF预览

UPS540E3/TR13

更新时间: 2024-11-30 15:56:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 功效二极管
页数 文件大小 规格书
6页 180K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN

UPS540E3/TR13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.22应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

UPS540E3/TR13 数据手册

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UPS540e3  
5 A Schottky Barrier Rectifier  
KEY FEATURES  
DESCRIPTION  
This UPS540e3 in the Powermite3® package is a high efficiency Schottky  
rectifier that is also RoHS compliant offering high current/power capabilities  
previously found only in much larger packages. They are ideal for SMD  
applications that operate at high frequencies. In addition to its size  
advantages, the Powermite3® package includes a full metallic bottom that  
eliminates the possibility of solder flux entrapment during assembly and a  
unique locking tab act as an efficient heat path to the heat-sink mounting.  
Its innovative design makes this device ideal for use with automatic insertion  
equipment.  
ƒ
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Very low thermal resistance package  
RoHS Compliant with e3 suffix part  
number  
Guard-ring-die construction for transient  
protection  
Efficient heat path with Integral locking  
bottom metal tab  
Low forward voltage  
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ƒ
ƒ
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Full metallic bottom eliminates flux  
entrapment  
ƒ
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Compatible with automatic insertion  
Low profile-maximum height of 1mm  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
APPLICATIONS/BENEFITS  
Rating  
Symbol  
Value  
Unit  
ƒ
ƒ
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Switching and Regulating Power  
Supplies.  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Silicon Schottky (hot carrier) rectifier for  
minimal reverse voltage recovery  
Elimination of reverse-recovery  
oscillations to reduce need for EMI  
filtering  
40  
V
RMS Reverse Voltage  
28  
5
V
A
V R (RMS)  
Io  
Average Rectified Output Current  
ƒ
ƒ
Charge Pump Circuits  
Reduces reverse recovery loss with low  
IRM  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on Rated Load@ Tc =90 ºC  
100  
A
IFSM  
Storage Temperature  
Junction Temperature  
TSTG  
TJ  
-55 to +150  
-55 to +125  
ºC  
ºC  
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Small foot print  
190 X 270 mils (1:1 Actual size)  
See mounting pad details on pg 3  
THERMAL CHARACTERISTICS  
MECHANICAL & PACKAGING  
Thermal Resistance  
CASE: Void-free transfer molded  
thermosetting epoxy compound meeting  
UL94V-0  
FINISH: Annealed matte-Tin plating over  
copper and readily solderable per MIL-  
STD-750 method 2026 (consult factory  
for Tin-Lead plating)  
Junction-to-case (bottom)  
Junction to ambient (1)  
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print  
RθJC  
RθJA  
3.2  
65  
ºC/ Watt  
ºC/ Watt  
Powermite 3™  
POLARITY: See figure (left)  
MARKING: S540•  
WEIGHT: 0.072 gram (approx.)  
Package dimension on last page  
Tape & Reel option: 16 mm tape per  
Standard EIA-481-B, 5000 on 13” reel  
Copyright © 2007  
10-15-2007 Rev E  
Microsemi  
Page 1  

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