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UPS360 PDF预览

UPS360

更新时间: 2024-11-08 22:17:11
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 153K
描述
3 A Schottky Barrier Rectifier

UPS360 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMT, POWERMITE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.22应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:60 V
表面贴装:YES技术:SCHOTTKY
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

UPS360 数据手册

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UPS360  
3 A Schottky Barrier Rectifier  
KEY FEATURES  
DESCRIPTION  
In Microsemi’s new Powermite3® SMT  
In addition to its size advantages,  
High power surface mount  
package, these high efficiency ultrafast Powermite3® package features include a full  
package.  
Guard Ring die construction for  
transient protection.  
Silicon Schottky rectifiers no  
reverse voltage recovery.  
Internal heat sink locking tabs  
Low forward voltage.  
Full metallic bottom eliminates  
flux entrapment  
rectifiers offer the power handing  
capabilities previously found only in  
much larger packages. They are ideal  
for SMD applications that operate at  
high frequencies.  
metallic bottom that eliminates the  
possibility of solder flux entrapment during  
assembly, and a unique locking tab acts as  
an integral heat sink. Its innovative design  
makes this device ideal for use with  
automatic insertion equipment.  
Compatible with automatic  
insertion equipment  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Low profile-maximum height of  
1mm supplied in 16 mm tape  
reel- 5000 units/ 13” reel.  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
60  
V
APPLICATIONS/BENEFITS  
Switching and Regulating Power  
Supplies.  
Charge Pump Circuits.  
Reduces reverse recovery loss  
RMS Reverse Voltage  
V R (RMS)  
Io  
42  
3
V
A
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on Rated Load  
100 @ 25 °C  
50 @ 100 °C  
IFSM  
A
due to low IRM  
Small foot print  
190 X 300 mils  
1:1 Actual size  
.
Storage Temperature  
Operating Temperature  
T stg  
T op  
-55 to +150  
-55 to +125  
ºC  
ºC  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance  
Junction-to Bottom  
Rja (1)  
2.5  
ºC/Watt  
(1) When Mounted on PC board with 2 ounce copper pattern.  
Copyright 2003  
Rev. 0, 2003-02-12  
Microsemi  
Page 1  

UPS360 替代型号

型号 品牌 替代类型 描述 数据表
UPS360E3 MICROSEMI

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, ROHS COMPLIANT, PL

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