Datasheet > UPS360/TR13

UPS360/TR13

更新时间： 2024-09-15 21:12:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
5页	236K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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UPS360/TR13 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

UPS360/TR13 数据手册

UPS360

3 A Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

In Microsemi’s new Powermite3^®SMT

In addition to its size advantages,

ꢀ High power surface mount

package, these high efficiency ultrafast Powermite3^®package features include a full

package.

ꢀ Guard Ring die construction for

transient protection.

ꢀ Silicon Schottky rectifiers no

reverse voltage recovery.

ꢀ Internal heat sink locking tabs

ꢀ Low forward voltage.

ꢀ Full metallic bottom eliminates

flux entrapment

rectifiers offer the power handing

capabilities previously found only in

much larger packages. They are ideal

for SMD applications that operate at

high frequencies.

metallic bottom that eliminates the

possibility of solder flux entrapment during

assembly, and a unique locking tab acts as

an integral heat sink. Its innovative design

makes this device ideal for use with

automatic insertion equipment.

ꢀ Compatible with automatic

insertion equipment

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

ꢀ Low profile-maximum height of

1mm supplied in 16 mm tape

reel- 5000 units/ 13” reel.

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

APPLICATIONS/BENEFITS

ꢀ Switching and Regulating Power

Supplies.

ꢀ Charge Pump Circuits.

ꢀ Reduces reverse recovery loss

RMS Reverse Voltage

V _{R (RMS)}

I_o

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on Rated Load

100 @ 25 °C

50 @ 100 °C

I_FSM

due to low I_RM

ꢀ Small foot print

190 X 300 mils

1:1 Actual size

Storage Temperature

Operating Temperature

T stg

T op

-55 to +150

-55 to +125

ºC

THERMAL CHARACTERISTICS

(UNLESS OTHERWISE SPECIFIED)

Thermal Resistance

Junction-to Bottom

Rja (1)

2.5

ºC/Watt

(1) When Mounted on PC board with 2 ounce copper pattern.

Rev. 0, 2003-02-12

Microsemi

Page 1

12 3 4 5

中文翻译

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