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UPS360/TR13 PDF预览

UPS360/TR13

更新时间： 2024-11-09 21:12:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
5页 236K
描述
Rectifier Diode,

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中文翻译

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UPS360/TR13 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.76
二极管类型：RECTIFIER DIODEBase Number Matches：1

UPS360/TR13 数据手册

 浏览型号UPS360/TR13的Datasheet PDF文件第2页浏览型号UPS360/TR13的Datasheet PDF文件第3页浏览型号UPS360/TR13的Datasheet PDF文件第4页浏览型号UPS360/TR13的Datasheet PDF文件第5页 
UPS360  
3 A Schottky Barrier Rectifier  
KEY FEATURES  
DESCRIPTION  
In Microsemi’s new Powermite3® SMT  
In addition to its size advantages,  
ꢀ High power surface mount  
package, these high efficiency ultrafast Powermite3® package features include a full  
package.  
ꢀ Guard Ring die construction for  
transient protection.  
ꢀ Silicon Schottky rectifiers no  
reverse voltage recovery.  
ꢀ Internal heat sink locking tabs  
ꢀ Low forward voltage.  
ꢀ Full metallic bottom eliminates  
flux entrapment  
rectifiers offer the power handing  
capabilities previously found only in  
much larger packages. They are ideal  
for SMD applications that operate at  
high frequencies.  
metallic bottom that eliminates the  
possibility of solder flux entrapment during  
assembly, and a unique locking tab acts as  
an integral heat sink. Its innovative design  
makes this device ideal for use with  
automatic insertion equipment.  
ꢀ Compatible with automatic  
insertion equipment  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
ꢀ Low profile-maximum height of  
1mm supplied in 16 mm tape  
reel- 5000 units/ 13” reel.  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
60  
V
APPLICATIONS/BENEFITS  
ꢀ Switching and Regulating Power  
Supplies.  
ꢀ Charge Pump Circuits.  
ꢀ Reduces reverse recovery loss  
RMS Reverse Voltage  
V R (RMS)  
Io  
42  
3
V
A
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on Rated Load  
100 @ 25 °C  
50 @ 100 °C  
IFSM  
A
due to low IRM  
ꢀ Small foot print  
190 X 300 mils  
1:1 Actual size  
.
Storage Temperature  
Operating Temperature  
T stg  
T op  
-55 to +150  
-55 to +125  
ºC  
ºC  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance  
Junction-to Bottom  
Rja (1)  
2.5  
ºC/Watt  
(1) When Mounted on PC board with 2 ounce copper pattern.  
Copyright 2003  
Rev. 0, 2003-02-12  
Microsemi  
Page 1  
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中文翻译

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