Datasheet > UPD45128841G5-A10BL-9JF

UPD45128841G5-A10BL-9JF

更新时间： 2024-01-20 02:08:37

品牌	Logo	应用领域
日电电子 - NEC		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
88页	713K
描述
Synchronous DRAM, 16MX8, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

µPD45128441, 45128841, 45128163

128M-bit Synchronous DRAM

4-bank, LVTTL

Description

The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access

memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).

These products are packaged in 54-pin TSOP (II).

Features

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by A12 and A13 (Bank Select)

• Byte control (×16) by LDQM and UDQM

• Programmable Wrap sequence (Sequential / Interleave)

• Programmable burst length (1, 2, 4, 8 and full page)

• Programmable /CAS latency (2 and 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• ×4, ×8, ×16 organization

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible inputs and outputs

• 4,096 refresh cycles / 64 ms

• Burst termination by Burst stop command and Precharge command

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M12650EJ9V0DS00 (9th edition)

Date Published March 1999 NS CP (K)

Printed in Japan

1997

The mark • shows major revised points.

12 3 4 5 6 7...88

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与UPD45128841G5-A10BL-9JF相关器件

型号	品牌	获取价格	描述	数据表
UPD45128841G5-A10L-9JF	NEC	获取价格	Synchronous DRAM, 16MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
UPD45128841G5-A10LT-9JF	ETC	获取价格	SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC
UPD45128841G5-A10T-9JF	ETC	获取价格	SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC
UPD45128841G5-A75	NEC	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A75-9JF	NEC	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A75-9JF	ELPIDA	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A75A-9JF	ELPIDA	获取价格	Synchronous DRAM, 16MX8, 5.4ns, MOS, PDSO54, PLASTIC, TSOP2-54
UPD45128841G5-A75L-9JF	ELPIDA	获取价格	128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128841G5-A75LI-9JF	ELPIDA	获取价格	Synchronous DRAM, 16MX8, 5.4ns, MOS, PDSO54, PLASTIC, TSOP2-54
UPD45128841G5-A75LT-9JF	ETC	获取价格	SDRAM\|4X4MX8\|CMOS\|TSOP\|54PIN\|PLASTIC