Datasheet > UPD44647366F5-E30-FQ1

UPD44647366F5-E30-FQ1

更新时间： 2024-11-26 07:09:31

品牌	Logo	应用领域
日电电子 - NEC		静态存储器
页数	文件大小	规格书
36页	479K
描述
IC,SYNC SRAM,QDR,2MX36,CMOS,BGA,165PIN,PLASTIC

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

μPD44647094,44647184,44647364,44647096,44647186,44647366

72M-BIT QDR^TMII+ SRAM

2.0 & 2.5 Cycle Read Latency

4-WORD BURST OPERATION

Description

The μPD44647094 and μPD44647096 are 8,388,608-word by 9-bit, the μPD44647184 and μPD44647186 are

4,194,304-word by 18-bit and the μPD44647364 and μPD44647366 are 2,097,152-word by 36-bit synchronous quad data

rate static RAMs fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD44647xx4 is for 2.0 cycle and the μPD44647xx6 is for 2.5 cycle read latency. The μPD44647094,

μPD44647096, μPD44647184, μPD44647186, μPD44647364 and μPD44647366 integrate unique synchronous

peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on

the positive edge of K and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high density

and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

• Core (VDD) = 1.8 ± 0.1 V power supply

I/O (V^DDQ) = 1.5 ± 0.1 V power supply

• 165-pin PLASTIC BGA (15x17)

• HSTL interface

• PLL circuitry for wide output data valid window and future frequency scaling

• Separate independent read and write data ports with concurrent transactions

• 100% bus utilization DDR READ and WRITE operation

• Four-tick burst for reduced address frequency

• Two input clocks (K and K#) for precise DDR timing at clock rising edges only

• Two Echo clocks (CQ and CQ#)

• Data Valid pin (QVLD) supported

• Read latency : 2.0 & 2.5 clock cycles (Not selectable by user)

• Internally self-timed write control

• Clock-stop capability. Normal operation is restored in 2,048 cycles after clock is resumed.

• User programmable impedance output (35 to 70 Ω)

• Fast clock cycle time : 2.66 ns (375 MHz) for 2.0 cycle read latency,

2.5 ns (400 MHz) for 2.5 cycle read latency

• Simple control logic for easy depth expansion

• JTAG 1149.1 compatible test access port

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M18526EJ1V0DS00 (1st edition)

Date Published November 2006 NS CP(N)

Printed in Japan

2006

12 3 4 5 6 7...36

中文翻译

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与UPD44647366F5-E30-FQ1相关器件

型号	品牌	获取价格	描述	数据表
UPD44647366F5-E30-FQ1-A	NEC	获取价格	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD44647366F5-E33-FQ1-A	NEC	获取价格	QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
UPD4464C-12	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464C-12L	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464C-15	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464C-15L	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464C-20	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464C-20L	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464G-12	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM
UPD4464G-12L	NEC	获取价格	8,192 X 8 - BIT STATIC CMOS RAM

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